IMPA008009P43 GaN Power Transistor
Technical Highlights
0.82–0.94GHz Internally Matched Design
The IMPA008009P43 is an internally matched GaN HEMT power transistor designed for operation from 0.82GHz to 0.94GHz in a 50Ω RF system.
43.2dBm Typical Saturated Output
The device provides 43.2dBm typical saturated output power under the specified +28V CW test conditions.
High Gain and Power Efficiency
Typical performance includes 20dB power gain and 60% power-added efficiency, supporting efficient RF power stages for communications and radar equipment.
Hermetic Flanged Package
The metal-ceramic hermetic package provides a screw-mounted flange and clearly defined gate and drain connections for RF assembly integration.
Electrical Specifications
| Device Technology | GaN HEMT |
|---|---|
| Frequency Range | 0.82–0.94GHz |
| Saturated Output Power | 43.2dBm typical |
| Power Gain | 20dB typical |
| Power-Added Efficiency | 60% typical |
| Power Flatness | 1dB maximum |
| RF Impedance | 50Ω input and output system |
| Test Conditions | TA = +25°C, VDS = +28V, VGS = -2.55V, IDS = 50mA, CW |
| Pinch-Off Voltage | -8V to -4V at VDS = 6V and IDS ≤ 100mA |
| Gate-Source Reverse Current | 5µA maximum at VDS = 0V and VGS = -10V |
Package and Operating Limits
| Package Type | Hermetic metal-ceramic flanged package |
|---|---|
| Dimensions | 12.90 × 21.00 × 4.80mm |
| Operating Temperature | -40°C to +75°C |
| Storage Temperature | -55°C to +125°C |
| Maximum Drain-Source Voltage | +100V |
| Maximum Gate-Source Voltage | -10V |
| Power Dissipation | 20W at TC = +25°C |
| Terminal Identification | Chamfered side: gate; flat side: drain |
Integration and Bias Notes
Apply the negative gate bias before applying the positive drain voltage.
During power-down, remove the drain voltage before removing the gate bias.
Use M2.5 mounting screws with a recommended tightening torque of 0.6N·m.
Provide a mounting slot width of at least 13.1mm and maintain a minimum 0.1mm lead-to-PCB height.
Keep the package temperature at or below +75°C during operation.
The reference circuit uses RO4350B material with 0.762mm thickness and a dielectric constant of 3.48.
The device is electrostatic-discharge sensitive; use grounded handling and assembly equipment.
FAQ
What frequency range does the IMPA008009P43 cover?
The specified operating frequency range is 0.82GHz to 0.94GHz.
What is the typical output power?
The device provides 43.2dBm typical saturated output power under the specified +28V CW test conditions.
Is the RF input and output internally matched?
Yes. The IMPA008009P43 is an internally matched GaN HEMT power transistor intended for use in a 50Ω RF system.
What gain and efficiency can the device provide?
The datasheet specifies 20dB typical power gain and 60% typical power-added efficiency.
How should the device be biased?
Apply the negative gate voltage before the positive drain voltage. During shutdown, remove the drain voltage before removing the gate bias.
B2B Procurement FAQ
What information should be provided with an RFQ?
Please provide the model number, required quantity, target application, destination country and any documentation or screening requirements.
Can samples be requested for evaluation?
Sample availability, quantity and lead time should be confirmed when submitting the inquiry.
Is a reference circuit available?
Yes. The supplied product material includes a recommended application circuit based on RO4350B RF laminate.
Can alternative testing or documentation be requested?
Please identify the required test conditions, inspection records or compliance documents in the RFQ so feasibility can be reviewed.
Are lead time and order quantity fixed?
Lead time, minimum order quantity and commercial terms depend on current availability and should be confirmed for each quotation.
